Samsung has agreed to Nvidia's request to have parts of the company's custom HBM4E high-bandwidth memory, marketed as NVHBM, produced using TSMC's 3 nanometer process.

Scope of Nvidia's request and NVHBM role

Nvidia asked its three main HBM suppliers to produce portions of the memory components using TSMC's 3 nm lithography, with the stated aims of ensuring uniform performance and simplifying cross-supplier validation. The chips in question are custom HBM4E devices that Nvidia brands as NVHBM, intended for use in its AI infrastructure.

  • Micron
  • SK hynix
  • Samsung

Division of wafer production and Samsung's in-house process

While some wafer fabrication for NVHBM will be routed to TSMC's 3 nm process, other portions of the memory stacks will be manufactured at Samsung's own fabs using the company's sixth-generation lithography, known as process 1c. Samsung has previously collaborated with TSMC on chip packaging, but having TSMC handle wafer production for Samsung-designed memory is unprecedented in Samsung's manufacturing history.